Invention Grant
- Patent Title: Thin film transistor and fabrication method thereof, array substrate, and display panel
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Application No.: US15564055Application Date: 2017-05-10
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Publication No.: US10211342B2Publication Date: 2019-02-19
- Inventor: Ke Wang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Dilworth & Barrese, LLP
- Agent Michael J. Musella, Esq.
- Priority: CN201610495890 20160628
- International Application: PCT/CN2017/083708 WO 20170510
- International Announcement: WO2018/000947 WO 20180104
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L27/32 ; H01L29/49

Abstract:
A thin film transistor and a fabrication method thereof, an array substrate, and a display panel are provided. The fabrication method of the thin film transistor includes: forming an active layer on a base substrate, the active layer including a channel region; forming an amorphous carbon layer on a region of the active layer other than the channel region; and forming a source electrode and a drain electrode on the amorphous carbon layer, the source electrode and the drain electrode being respectively electrically connected with the active layer through the amorphous carbon layer.
Public/Granted literature
- US20180204949A1 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY PANEL Public/Granted day:2018-07-19
Information query
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