Invention Grant
- Patent Title: Method for producing optoelectronic devices comprising light-emitting diodes
-
Application No.: US14916985Application Date: 2014-09-30
-
Publication No.: US10211365B2Publication Date: 2019-02-19
- Inventor: Christophe Bouvier , Emilie Pougeoise , Xavier Hugon , Carlo Cagli , Tiphaine Dupont , Philippe Gibert , Nacer Aitmani
- Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Aledia
- Applicant Address: FR Paris FR Grenoble
- Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives,Aledia
- Current Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives,Aledia
- Current Assignee Address: FR Paris FR Grenoble
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR1359413 20130930
- International Application: PCT/FR2014/052472 WO 20140930
- International Announcement: WO2015/044620 WO 20150402
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/18 ; H01L33/62 ; H01L33/50 ; H01L33/54 ; H01L33/08 ; H01L33/38 ; H01L25/075

Abstract:
A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.
Public/Granted literature
- US20160218240A1 METHOD FOR PRODUCING OPTOELECTRONIC DEVICES COMPRISING LIGHT-EMITTING DIODES Public/Granted day:2016-07-28
Information query
IPC分类: