Invention Grant
- Patent Title: Circuit arrangement for fast turn-off of bi-directional switching device
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Application No.: US15600961Application Date: 2017-05-22
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Publication No.: US10211822B2Publication Date: 2019-02-19
- Inventor: Evgueniy Nikolov Stefanov , Laurent Guillot
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Priority: EP16305587 20160523
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H03K17/041 ; H01L27/07 ; H01L29/40 ; H01L29/78 ; H03K5/08 ; H03K17/10 ; H01L29/08

Abstract:
Embodiments of a transistor control device for controlling a bi-directional power transistor are disclosed. In an embodiment, a transistor control device for controlling a bi-directional power transistor includes a resistor connectable to a body terminal of the bi-directional power transistor and a transistor body switch circuit connectable to the resistor, to a drain terminal of the bi-directional power transistor, and to a source terminal of the bi-directional power transistor. The transistor body switch circuit includes switch devices and alternating current (AC) capacitive voltage dividers connected to control terminals of the switch devices. The AC capacitive voltage dividers are configured to control the switch devices to switch a voltage of the body terminal of the bi-directional power transistor as a function of a voltage between the drain terminal of the bi-directional power transistor and the source terminal of the bi-directional power transistor.
Public/Granted literature
- US20170338809A1 CIRCUIT ARRANGEMENT FOR FAST TURN-OFF OF BI-DIRECTIONAL SWITCHING DEVICE Public/Granted day:2017-11-23
Information query
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