Invention Grant
- Patent Title: System and method for deducing charge density gradients in doped semiconductors
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Application No.: US15151216Application Date: 2016-05-10
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Publication No.: US10215796B2Publication Date: 2019-02-26
- Inventor: Matthew Grayson , Wang Zhou
- Applicant: Northwestern University
- Applicant Address: US IL Evanston
- Assignee: Northwestern University
- Current Assignee: Northwestern University
- Current Assignee Address: US IL Evanston
- Agency: Benesch, Friedlander, Coplan & Aronoff LLP
- Main IPC: G01R31/26
- IPC: G01R31/26
Abstract:
A system and a method determine a quality of a doped semiconductor layer in terms of a charge carrier density gradient by measuring two magnetic-field-dependent resistances using four contacts of a specimen.
Public/Granted literature
- US20160334457A1 SYSTEM AND METHOD FOR DEDUCING CHARGE DENSITY GRADIENTS IN DOPED SEMICONDUCTORS Public/Granted day:2016-11-17
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