Invention Grant
- Patent Title: High voltage failure recovery for emulated electrically erasable (EEE) memory system
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Application No.: US15390789Application Date: 2016-12-27
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Publication No.: US10216564B2Publication Date: 2019-02-26
- Inventor: Ross S. Scouller , Jeffrey C. Cunningham , Daniel L. Andre , Tim J. Coots
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G06F11/07
- IPC: G06F11/07

Abstract:
The present disclosure provides methods and circuits for managing failing sectors in a non-volatile memory. A record address and a read control signal are received, where the record address identifies a location in the non-volatile memory. The record address is compared with a plurality of dead sector addresses, where the dead sector addresses correspond to a subset of sectors located in the non-volatile memory. Data located at the record address is determined to be invalid in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory.
Public/Granted literature
- US20170109224A1 HIGH VOLTAGE FAILURE RECOVERY FOR EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY SYSTEM Public/Granted day:2017-04-20
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