Invention Grant
- Patent Title: Chip with phase change memory and magnetoresistive random access memory
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Application No.: US15692780Application Date: 2017-08-31
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Publication No.: US10217505B1Publication Date: 2019-02-26
- Inventor: Mac D. Apodaca , Luiz Franca-Neto , Jordan Katine
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Kunzler, PC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C11/4096 ; G11C11/56 ; G11C13/00 ; H03K19/16 ; H01L45/00
Abstract:
Apparatuses, systems, and methods are disclosed for a chip with phase change memory (PCM) and magnetoresistive random access memory (MRAM). An apparatus includes a semiconductor circuit formed over a substrate of a chip. An apparatus includes a PCM array formed over a semiconductor circuit. An apparatus includes an MRAM array formed over a semiconductor circuit.
Public/Granted literature
- US20190066763A1 CHIP WITH PHASE CHANGE MEMORY AND MAGNETORESISTIVE RANDOM ACCESS MEMORY Public/Granted day:2019-02-28
Information query
