Invention Grant
- Patent Title: Control of current collapse in thin patterned GaN
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Application No.: US15001957Application Date: 2016-01-20
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Publication No.: US10217641B2Publication Date: 2019-02-26
- Inventor: William J. Gallagher , Marinus Johannes Petrus Hopstaken , Ko-Tao Lee , Tomas Palacios , Daniel Piedra , Devendra K. Sadana
- Applicant: International Business Machines Corporation , Massachusetts Institute of Technology
- Applicant Address: US NY Armonk US MA Cambridge
- Assignee: International Business Machines Corporation,MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee: International Business Machines Corporation,MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee Address: US NY Armonk US MA Cambridge
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/306 ; H01L21/02 ; H01L29/207 ; H01L29/10 ; H01L29/20
Abstract:
A GaN device is formed on a semiconductor substrate having a plurality of recessed regions formed in a surface thereof. A seed layer, optional buffer layer, and gallium nitride layer such as a carbon-doped gallium nitride layer are successively deposited within the recessed regions. Improved current collapse response of the GaN device is attributed to maximum length and width dimensions of the multilayer stack.
Public/Granted literature
- US20160225887A1 CONTROL OF CURRENT COLLAPSE IN THIN PATTERNED GAN Public/Granted day:2016-08-04
Information query
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