Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15923412Application Date: 2018-03-16
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Publication No.: US10217687B2Publication Date: 2019-02-26
- Inventor: Tien-Chung Yang , Lin-Chih Huang , Hsien-Wei Chen , An-Jhih Su , Li-Hsien Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/31 ; H01L21/48 ; H01L21/78 ; H01L23/00 ; H01L23/482 ; H01L23/485 ; H01L21/56 ; H01L21/60
Abstract:
A semiconductor device includes a semiconductor substrate, a conductive pad over the semiconductor substrate, a conductor over the conductive pad, a polymeric material over the semiconductor substrate and surrounding the conductor, and a seed layer between the polymeric material and the conductor. A top surface of the conductor, a top surface of the polymeric material and a top surface of the seed layer are substantially coplanar.
Public/Granted literature
- US20180211895A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-07-26
Information query
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