An nchMOSFET of a level-raising circuit is arranged in a high voltage junction termination region (HVJT), to be integrated with a parasitic diode formed by an n−-type diffusion region and a second p-type separation region. On a high potential side of the HVJT, a first field plate (FP) also acting as a drain electrode of the nchMOSFET and a second FP also acting as a cathode electrode of a parasitic diode are arranged away from each other. On a low potential side the HVJT, a third electrode also acting as a source electrode of the nchMOSFET is arranged in a planar layout surrounding the periphery of a high potential side region. On an interlayer insulating film, an interval between a first portion of the third FP and a fourth portion of the first FP is larger than an interval between the second and the third FPs.