A first contact hole is formed so as to extend to a NiSi layer as a lower wiring conductor layer connecting to an N+ layer of an SGT formed within a Si pillar, and so as to extend through a NiSi layer as an upper wiring conductor layer connecting to a gate TiN layer, and a NiSi layer as an intermediate wiring conductor layer connecting to an N+ layer. A second contact hole is formed so as to extend to the NiSi layer, and surround, in plan view, the first contact hole. An insulating SiO2 layer is formed on a side surface of the NiSi layer. A wiring metal layer in the contact holes connects the NiSi layer and the NiSi layer to each other.