Invention Grant
- Patent Title: Low distortion RF switch
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Application No.: US15861183Application Date: 2018-01-03
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Publication No.: US10218353B2Publication Date: 2019-02-26
- Inventor: John S. Glaser , David C. Reusch , Michael A. de Rooij
- Applicant: Efficient Power Conversion Corporation
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Blank Rome LLP
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K17/687 ; H03K17/693

Abstract:
A circuit for an RF switch using FET transistors that largely cancels the non-linearity of the Coss of the FETs over a majority of the signal range, and reduces distortion. The RF switch includes two substantially identical FETs. The source of one FET is connected to the drain of the other FET and the node formed comprises one terminal of the switch. Two substantially identical capacitors are connected in series with each other and in parallel with the FETs, and the node thus formed comprises the second terminal of the switch. The capacitors are selected such that they have negligible impedance at AC frequencies for which the switch is expected be used, and in particular a much lower impedance than Coss of each FET. A voltage source with a series impedance is also connected in parallel with the capacitors and the two FETs.
Public/Granted literature
- US20180191344A1 LOW DISTORTION RF SWITCH Public/Granted day:2018-07-05
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