Invention Grant
- Patent Title: Silicon carbide substrate
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Application No.: US15989373Application Date: 2018-05-25
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Publication No.: US10221501B2Publication Date: 2019-03-05
- Inventor: Tsubasa Honke , Kyoko Okita
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2014-240106 20141127
- Main IPC: H01L29/04
- IPC: H01L29/04 ; C30B33/12 ; B24B37/00 ; C09K3/14 ; C30B29/36 ; C01B32/956 ; B08B3/08 ; B24B37/04 ; C09G1/02 ; C30B33/10 ; H01L21/02 ; H01L21/306 ; H01L29/16 ; H01L29/34 ; H01L29/78 ; H01L29/861
Abstract:
A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear etch-pit groups observed in the main surface is equal to or less than the diameter of the substrate.
Public/Granted literature
- US20180274129A1 SILICON CARBIDE SUBSTRATE Public/Granted day:2018-09-27
Information query
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