Invention Grant
- Patent Title: Sensor device and semiconductor device
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Application No.: US15443134Application Date: 2017-02-27
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Publication No.: US10222430B2Publication Date: 2019-03-05
- Inventor: Tomomitsu Ohara , Yasuaki Aikyo , Tomoyuki Sakurada
- Applicant: Tomomitsu Ohara , Yasuaki Aikyo , Tomoyuki Sakurada
- Applicant Address: JP Tokyo
- Assignee: MITSUMI ELECTRIC CO., LTD.
- Current Assignee: MITSUMI ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2016-039137 20160301; JP2017-018963 20170203
- Main IPC: G01R33/00
- IPC: G01R33/00 ; H03F3/45 ; H01L25/16 ; H01L23/522 ; H01L23/29 ; G01R15/18 ; G01R33/038

Abstract:
A sensor device is provided including: an electric wire; a semiconductor device including an inductor and an amplifier, the inductor being configured to detect a magnetic field generated around the electric wire, the amplifier including a bipolar element configured to amplify a voltage generated at the inductor; and a substrate on which the first semiconductor device and the electric wire are arranged such that the first semiconductor device is apart from the electric wire by at least a given distance. In a plan view of the substrate, the electric wire does not overlap the first semiconductor device.
Public/Granted literature
- US20170254861A1 SENSOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2017-09-07
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