Invention Grant
- Patent Title: Photomask and manufacturing method of semiconductor device
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Application No.: US15422654Application Date: 2017-02-02
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Publication No.: US10222692B2Publication Date: 2019-03-05
- Inventor: Masaki Mae , Suigen Kanda
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G03F1/50
- IPC: G03F1/50 ; G03F1/60 ; G03F1/70 ; G03F1/76 ; G03F7/16 ; G03F7/20 ; G03F7/26 ; G03F7/095 ; H01L21/027 ; H01L21/311 ; H01L27/11575 ; H01L27/11582
Abstract:
A photomask according to the embodiment includes a glass substrate which has a first face and a second face located on a side opposite from the first face. The second face includes a transmission area and a light shielding area corresponding to an exposure pattern of a resist film exposed via the glass substrate. The transmission area is oblique to the first face.
Public/Granted literature
- US20180157159A1 PHOTOMASK AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-06-07
Information query
