Invention Grant
- Patent Title: Parallel read and writes in 3D flash memory
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Application No.: US15093372Application Date: 2016-04-07
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Publication No.: US10223004B2Publication Date: 2019-03-05
- Inventor: Saravanan Sethuraman , Gary A. Tressler , Harish Venkataraman
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Patterson + Sheridan, LLP
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
Embodiments herein describe a 3D flash memory system that includes multiple blocks where each block contains multiple pages arranged in a vertical stack. Instead of having a single command line indicating whether a read or program is to be performed, separate command lines are coupled to each of the blocks. As a result, if the memory system identifies a read request and a program request to different blocks, the requests can be performed in parallel. In one embodiment, a program command line is used to perform a program request on a first block while a read command line is used to perform a read request on a second block in the 3D flash memory system in parallel. Furthermore, because a program request can take much longer to complete than a read request, the 3D flash memory system can perform multiple read requests in parallel with the program request.
Public/Granted literature
- US20170293436A1 PARALLEL READ AND WRITES IN 3D FLASH MEMORY Public/Granted day:2017-10-12
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