Invention Grant
- Patent Title: System and method for implementing super word line zones in a memory device
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Application No.: US15418455Application Date: 2017-01-27
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Publication No.: US10223022B2Publication Date: 2019-03-05
- Inventor: Meiman Lin Syu , Steven Sprouse , Kroum Stoev , Satish Vasudeva
- Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
- Applicant Address: US CA San Jose
- Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee Address: US CA San Jose
- Agency: The Marbury Law Group PLLC
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10 ; G11C29/52 ; G11C29/00 ; G11C29/02 ; G11C29/44

Abstract:
A set of superblocks can be constructed by a memory controller employing good blocks and partially bad blocks in a plurality of memory access units. Each functional memory access unit among the plurality of memory access units contributes a single block that is a good block or a partially bad block to each superblock. The memory controller can further construct a set of super word line zones within each superblock in the set of superblocks. Each block within a superblock contributes a good word line zone to each super word line zone. Upon encounter of a program error at run time, the super word line zones within the superblock may be modified to continue running the program employing modified super word line zones for the superblock.
Public/Granted literature
- US20180217892A1 SYSTEM AND METHOD FOR IMPLEMENTING SUPER WORD LINE ZONES IN A MEMORY DEVICE Public/Granted day:2018-08-02
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