Invention Grant
- Patent Title: Memory access method, storage-class memory, and computer system
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Application No.: US15638582Application Date: 2017-06-30
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Publication No.: US10223273B2Publication Date: 2019-03-05
- Inventor: RenHua Yang , Junfeng Zhao , Wei Yang , Yuangang Wang , Yinyin Lin
- Applicant: HUAWEI TECHNOLOGIES CO., LTD. , Fudan University
- Applicant Address: CN Shenzhen CN Shanghai
- Assignee: Huawei Technologies Co., Ltd.,Fudan University
- Current Assignee: Huawei Technologies Co., Ltd.,Fudan University
- Current Assignee Address: CN Shenzhen CN Shanghai
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: CN201410856607 20141231
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F12/0868 ; G06F13/28 ; G06F11/14 ; G06F12/0802 ; G06F12/109 ; G11C11/406

Abstract:
A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.
Public/Granted literature
- US20170300419A1 MEMORY ACCESS METHOD, STORAGE-CLASS MEMORY, AND COMPUTER SYSTEM Public/Granted day:2017-10-19
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