Invention Grant
- Patent Title: Semiconductor device manufacturing method and mask manufacturing method
-
Application No.: US15219142Application Date: 2016-07-25
-
Publication No.: US10223494B2Publication Date: 2019-03-05
- Inventor: So-eun Shin , Ji-soong Park , Suk-ho Lee , Jung-wook Shon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0104358 20150723
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20 ; G03F1/36

Abstract:
A method of manufacture comprises a mask process correction (MPC) and verifying MPC accuracy. MPC may be performed on mask tape-out (MTO) data describing a mask pattern to obtain mask process corrected data. MPC may be performed to address a deviation between the MTO data and a mask to be manufactured. Verification of the MPC may be performed by generating a two-dimensional (2D) contour of mask pattern elements based on the mask process corrected data. When MPC has been verified, the mask process corrected data may be used to manufacture a mask and a semiconductor device.
Public/Granted literature
- US20170024510A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND MASK MANUFACTURING METHOD Public/Granted day:2017-01-26
Information query