Invention Grant
- Patent Title: Semiconductor memory device with late write feature
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Application No.: US15371062Application Date: 2016-12-06
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Publication No.: US10224080B2Publication Date: 2019-03-05
- Inventor: Toshihiko Funaki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2016-000976 20160106
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C7/10 ; G11C5/06 ; G11C7/22 ; G11C29/02 ; G11C29/50

Abstract:
A stack memory includes a base chip, a memory chip stacked over the base chip, and a via 42 provided between the base chip and the memory chip. The base chip has an external interface circuit and a late write control circuit. The external interface circuit externally receives/transmits write data and read data. The late write control circuit has at least a register storing write data externally supplied through the external interface circuit. The memory chip has a memory cell array and a late write control circuit having at least a register storing write data supplied from the register through the via.
Public/Granted literature
- US20170194039A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2017-07-06
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