A memory device includes a per bank refresh counter applicable to multiple banks in a group. The memory device increments a row address counter only when the per bank refresh counter is reset. The memory device receives a per bank refresh command from an associated memory controller, and performs a per bank refresh in response to receiving the per bank refresh command. The memory device refreshes a row identified by a row address counter for a bank identified by the per bank refresh command. The memory device increments the per bank refresh counter in response to receiving the per bank refresh command, and increments the row address counter when the per bank refresh counter is reset, either by rolling over or by a reset condition.