Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15921226Application Date: 2018-03-14
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Publication No.: US10224096B2Publication Date: 2019-03-05
- Inventor: Yuichiro Ishii , Atsushi Miyanishi , Kazumasa Yanagisawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2014-223178 20141031
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/417 ; H03K19/00 ; H03K17/687 ; H01L23/528 ; H01L27/11 ; H01L29/10

Abstract:
A semiconductor device includes: a first power source line for supplying a first voltage; a second power source line for supplying a second voltage; a memory circuit coupled with the first and second power source lines; a first switch which electrically coupling the first power source line with the second power source line and electrically decoupling the first power source line from the second power source line, in response to a control signal; a second switch which electrically coupling the first power source line with the second power source line and electrically decoupling the first power source line from the second power source line, in response to the control signal, wherein a memory circuit includes a memory cell array and a peripheral circuit, wherein a memory cell array includes a plurality of memory cells, the memory cells coupled with the second power source line.
Public/Granted literature
- US20180204612A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-07-19
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