Invention Grant
- Patent Title: Error characterization and mitigation for 16 nm MLC NAND flash memory under total ionizing dose effect
-
Application No.: US15849423Application Date: 2017-12-20
-
Publication No.: US10224111B2Publication Date: 2019-03-05
- Inventor: Yue Li , Jehoshua Bruck
- Applicant: California Institute of Technology
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/34 ; G11C16/16 ; G11C16/10 ; G11C16/04 ; G11C29/44 ; G11C29/04
Abstract:
A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
Public/Granted literature
- US20180197617A1 ERROR CHARACTERIZATION AND MITIGATION FOR 16NM MLC NAND FLASH MEMORY UNDER TOTAL IONIZING DOSE EFFECT Public/Granted day:2018-07-12
Information query
