Invention Grant
- Patent Title: Forming a contact for a tall fin transistor
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Application No.: US15801458Application Date: 2017-11-02
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Publication No.: US10224207B2Publication Date: 2019-03-05
- Inventor: Kangguo Cheng , Ruilong Xie , Tenko Yamashita
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/285 ; H01L29/78 ; H01L29/08 ; H01L29/45 ; H01L21/283 ; H01L21/8234 ; H01L27/088 ; H01L29/417 ; H01L21/768
Abstract:
A method of making a semiconductor device includes forming a recessed fin in a substrate, the recessed fin being substantially flush with a surface of the substrate; performing an epitaxial growth process over the recessed fin to form a source/drain over the recessed fin; and disposing a conductive metal around the source/drain.
Public/Granted literature
- US20180068858A1 FORMING A CONTACT FOR A TALL FIN TRANSISTOR Public/Granted day:2018-03-08
Information query
IPC分类:
