Invention Grant
- Patent Title: Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition
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Application No.: US15422953Application Date: 2017-02-02
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Publication No.: US10224235B2Publication Date: 2019-03-05
- Inventor: Jason Daejin Park , Bart van Schravendijk , Hsiang-yun Lee , Purushottam Kumar
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L21/02 ; H01L23/485
Abstract:
A method for processing a substrate to create an air gap includes a) providing a substrate including a first trench and a second trench; b) depositing a conformal layer on the substrate; c) performing sputtering to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench; and d) performing sputtering/deposition to seal first and second airgaps in the first trench and the second trench.
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