Invention Grant
- Patent Title: Method of making a finFET, and finFET formed by the method
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Application No.: US15076762Application Date: 2016-03-22
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Publication No.: US10224245B2Publication Date: 2019-03-05
- Inventor: Chia-Pin Lin , Chien-Tai Chan , Hsien-Chin Lin , Shyue-Shyh Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/8234 ; H01L29/06 ; H01L29/08 ; H01L29/161 ; H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L29/165
Abstract:
A method includes forming first and second fins of a finFET extending above a semiconductor substrate, with a shallow trench isolation (STI) region in between, and a distance between a top surface of the STI region and top surfaces of the first and second fins. First and second fin extensions are provided on top and side surfaces of the first and second fins above the top surface of the STI region. Material is removed from the STI region, to increase the distance between the top surface of the STI region and top surfaces of the first and second fins. A conformal stressor dielectric material is deposited over the fins and STI region. The conformal dielectric stressor material is reflowed, to flow into a space between the first and second fins above a top surface of the STI region, to apply stress to a channel of the finFET.
Public/Granted literature
- US20160204255A1 METHOD OF MAKING A FINFET, AND FINFET FORMED BY THE METHOD Public/Granted day:2016-07-14
Information query
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