A back-side device structure with a silicon-on-insulator substrate that includes: a first dielectric layer that includes a first via that communicates with a trench, a contact plug that fills the trench, and a first contact formed in a second dielectric layer. The first contact fills the first via and connects with the contact plug and a wire formed in a third dielectric layer. A final substrate is connected to a buried insulator layer of the silicon-on-insulator substrate such that the contact plug contacts metallization of the final substrate.