Invention Grant
- Patent Title: Protection device and operation system utilizing the same
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Application No.: US15198494Application Date: 2016-06-30
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Publication No.: US10224282B2Publication Date: 2019-03-05
- Inventor: Shao-Chang Huang
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/528 ; H01L27/08 ; H01L21/8238

Abstract:
A protection device including a substrate, a first doped region, a first well region, a second doped region, a third doped region, a fourth doped region, a second well region, a fifth doped region, and a sixth doped region is provided. The substrate, the first well region, and the third and the fifth doped regions have a first conductivity type. The first doped and the second well regions are disposed in the substrate. The first, second, fourth, and sixth doped regions and the second well region have a second conductivity type. The first well and the second doped regions are disposed in the first doped region. The second doped region is not in contact with the first well region. The third and fourth doped regions are disposed in the first well region. The fifth and sixth doped regions are disposed in the second well region.
Public/Granted literature
- US20180006012A1 PROTECTION DEVICE AND OPERATION SYSTEM UTILIZING THE SAME Public/Granted day:2018-01-04
Information query
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