Invention Grant
- Patent Title: Nitride structure having gold-free contact and methods for forming such structures
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Application No.: US15438148Application Date: 2017-02-21
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Publication No.: US10224285B2Publication Date: 2019-03-05
- Inventor: Jeffrey R. LaRoche , Eduardo M. Chumbes , Kelly P. Ip , Thomas E. Kazior
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/45 ; H01L21/324 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L23/535 ; H01L29/417

Abstract:
A semiconductor structure having a Group III-N semiconductor layer disposed on a substrate. A multi-layer, electrical contact structure in contact with the Group III-N semiconductor layer includes a gold-free contact layer in contact with the Group III-N semiconductor layer; and a gold-free electrically conductive etch stop layer electrically connected to the gold-free contact layer. An electrically conductive via passes through the substrate to the etch stop layer. The structure includes a plurality of electrode structures, each one providing a corresponding one of a source electrode structure, drain electrode structure and a gate electrode structure. The source electrode structure, drain electrode structure and gate electrode structure include: an electrical contact structure and an electrode contact. The electrode contacts have the same gold-free structure and have co-planar upper surfaces.
Public/Granted literature
- US20180240753A1 NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING SUCH STRUCTURES Public/Granted day:2018-08-23
Information query
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