Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15735858Application Date: 2016-03-02
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Publication No.: US10224294B2Publication Date: 2019-03-05
- Inventor: Koichiro Nishizawa , Takayuki Hisaka
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-161093 20150818
- International Application: PCT/JP2016/056394 WO 20160302
- International Announcement: WO2017/029822 WO 20170223
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/02 ; H01L23/04 ; H01L23/10 ; H01L23/12 ; H01L23/14 ; H01L29/812 ; H01L21/48 ; H01L21/768 ; H01L23/48 ; H01L23/544 ; H01L23/552 ; H01L25/065
Abstract:
Airtightness of a hollow portion is maintained, and yield and durability are improved. A semiconductor device 1 includes a device substrate 2, a semiconductor circuit 3, a sealing frame 7, a cap substrate 8, via portions 10, electrodes 11, 12 and 13, and a bump portion 14 or the like. A hollow portion 9 in which the semiconductor circuit 3 is housed in an airtight state is provided between the device substrate 2 and the cap substrate 8. The bump portion 14 connects all the via portions 10 and the cap substrate 8. Thus, the via portions 10 can be reinforced using the bump portion 14A.
Public/Granted literature
- US20180138132A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-05-17
Information query
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