An electrostatic protection element whose electrostatic breakdown resistance can be adjusted with a required minimum design change is provided.A semiconductor device includes an electrostatic protection element including a bipolar transistor whose base region and emitter region are electrically coupled together through a resistance region. At this time, the base region of the electrostatic protection element has a side including a facing portion that faces the collector region. The facing portion of the side includes an exposed portion that is exposed from an emitter wiring in plan view and a covered portion that is covered by the emitter wiring in plan view.