Invention Grant
- Patent Title: Terahertz CMOS sensor
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Application No.: US15636667Application Date: 2017-06-29
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Publication No.: US10224363B2Publication Date: 2019-03-05
- Inventor: Haim Goldberger , Péter Földesy , Omer Eshet
- Applicant: NETEERA TECHNOLOGIES LTD.
- Applicant Address: IL Jerusalem
- Assignee: NETEERA TECHNOLOGIES LTD.
- Current Assignee: NETEERA TECHNOLOGIES LTD.
- Current Assignee Address: IL Jerusalem
- Agency: Soroker Agmon Nordman
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; H04N5/378 ; G01J5/08 ; H01Q1/22 ; H01Q1/52 ; H01Q9/28 ; H01Q15/08 ; H01Q19/06 ; H01Q19/10 ; H01Q21/06 ; H01Q25/00 ; G01J5/20

Abstract:
An imaging sensor for accepting terahertz signals, including a die made of a dielectric material, one or more antennas for receiving terahertz signals, positioned on top of the die or in an upper layer of the die, each antenna having a CMOS detector electrically coupled to the antenna and positioned in the die below the antenna, a metal shield layer in the die below the antennas and above the CMOS detectors, shielding the CMOS detector from interference signals, a shielding layer under the die comprising a back metal coating and/or a layer of silver epoxy glue for attaching the bottom of the die to a lead frame.
Public/Granted literature
- US20180033819A1 TERAHERTZ CMOS SENSOR Public/Granted day:2018-02-01
Information query
IPC分类: