Invention Grant
- Patent Title: Thin film transistor, method for producing the same, array substrate and display apparatus
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Application No.: US15326399Application Date: 2016-02-03
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Publication No.: US10224409B2Publication Date: 2019-03-05
- Inventor: Yongchao Huang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Kinney & Lange, P.A.
- Priority: CN201510613414 20150923
- International Application: PCT/CN2016/073297 WO 20160203
- International Announcement: WO2017/049835 WO 20170330
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L29/49 ; G02F1/1362 ; G02F1/1343 ; G02F1/1368 ; H01L21/02 ; H01L21/04 ; H01L27/12 ; H01L29/16 ; H01L29/167 ; H01L29/40 ; H01L29/66 ; H01L29/786 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L27/32 ; H01L51/52

Abstract:
The present disclosure provides a thin film transistor, a method for producing the same, an array substrate and a display apparatus. An electrode of the thin film transistor is made of Cu or Cu alloy, and an anti-oxidization layer is used to prevent oxidization of Cu. The thin film transistor includes a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode and a drain electrode provided on a base substrate, wherein the gate electrode and/or the drain and source electrodes is/are made of Cu or Cu alloy. The thin film transistor further includes an anti-oxidization layer made of a topological insulator material, the anti-oxidization layer being provided above and in contact with the gate electrode and/or the source and drain electrodes made of Cu or Cu alloy.
Public/Granted literature
- US20170263726A1 THIN FILM TRANSISTOR, METHOD FOR PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS Public/Granted day:2017-09-14
Information query
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