Invention Grant
- Patent Title: Integrated vertical nanowire memory
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Application No.: US16050860Application Date: 2018-07-31
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Publication No.: US10224415B2Publication Date: 2019-03-05
- Inventor: Effendi Leobandung
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L21/283 ; H01L21/02 ; H01L29/423 ; H01L29/775 ; H01L29/40 ; B82Y10/00 ; H01L21/762 ; H01L21/768 ; H01L29/78 ; H01L27/108
Abstract:
A nanowire structure includes successive crystalline nanowire segments formed over a semiconductor substrate. A first crystalline segment formed directly on the semiconductor substrate provides electrical isolation between the substrate and the second crystalline segment. Second and fourth crystalline segments are each formed from a p-type or an n-type semiconductor material, while the third crystalline segment is formed from a semiconductor material that is oppositely doped with respect to the second and fourth crystalline segments.
Public/Granted literature
- US20180350954A1 INTEGRATED VERTICAL NANOWIRE MEMORY Public/Granted day:2018-12-06
Information query
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