Invention Grant
- Patent Title: Heterojunction bipolar transistor and method of manufacturing the same
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Application No.: US15783469Application Date: 2017-10-13
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Publication No.: US10224423B1Publication Date: 2019-03-05
- Inventor: Alexis Gauthier , Pascal Chevalier , Gregory Avenier
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMircoelectronics (Crolles 2) SAS
- Current Assignee: STMircoelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/331 ; H01L21/8222 ; H01L29/732 ; H01L29/06 ; H01L29/08 ; H01L29/66 ; H01L29/10 ; H01L21/3105
Abstract:
A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.
Information query
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