Invention Grant
- Patent Title: Semiconductor module with two auxiliary emitter conductor paths
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Application No.: US15237058Application Date: 2016-08-15
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Publication No.: US10224424B2Publication Date: 2019-03-05
- Inventor: Samuel Hartmann , Didier Cottet , Slavo Kicin
- Applicant: ABB Schweiz AG
- Applicant Address: CH Baden
- Assignee: ABB Schweiz AG
- Current Assignee: ABB Schweiz AG
- Current Assignee Address: CH Baden
- Agency: Taft Stettinius & Hollister LLP
- Agent J. Bruce Schelkopf
- Priority: EP14155208 20140214
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L23/64 ; H01L25/07 ; H03K17/12 ; H01L23/02 ; H01L23/00 ; H01L27/088 ; H01L29/417 ; H01L29/423 ; H03K17/081 ; H03K17/082 ; H03K17/0424 ; H02M1/088

Abstract:
A semiconductor module comprises a semiconductor chip comprising a semiconductor switch having a collector, emitter and gate, a collector terminal connected to the collector, gate terminal connected to the gate, an emitter terminal connected to the emitter via an emitter conductor path having an emitter inductance, an auxiliary emitter terminal connected to the emitter, a first conductor path connected to the emitter, and a second conductor path connected to the emitter having a different mutually inductive coupling with the emitter conductor path as the first conductor path. The first conductor path and the second conductor path are connectable to the auxiliary emitter terminal and/or the first conductor path is connected to the auxiliary emitter terminal and the second conductor path is connected to a second auxiliary emitter terminal. The semiconductor switch is an IGBT and each of the first conductor path and the second conductor path comprises bridging points for connecting the respective conductor path to the auxiliary emitter terminal.
Public/Granted literature
- US20160351697A1 SEMICONDUCTOR MODULE WITH TWO AUXILIARY EMITTER CONDUCTOR PATHS Public/Granted day:2016-12-01
Information query
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