Invention Grant
- Patent Title: Mechanical forming of resistive memory devices
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Application No.: US14507977Application Date: 2014-10-07
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Publication No.: US10224481B2Publication Date: 2019-03-05
- Inventor: I-Wei Chen , Yang Lu
- Applicant: The Trustees of the University of Pennsylvania
- Applicant Address: US PA Philadelphia
- Assignee: The Trustees of the University of Pennsylvania
- Current Assignee: The Trustees of the University of Pennsylvania
- Current Assignee Address: US PA Philadelphia
- Agency: Baker & Hostetler LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00
Abstract:
Provided are methods of forming electric devices by effecting application of a stress to the device so as to deform the device within the device's elastic limit and to place the device into a new electric—e.g., resistance—state.
Public/Granted literature
- US20160099410A1 MECHANICAL FORMING OF RESISTIVE MEMORY DEVICES Public/Granted day:2016-04-07
Information query
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