- Patent Title: Semiconductor laser mounting with intact diffusion barrier layer
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Application No.: US15652177Application Date: 2017-07-17
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Publication No.: US10224693B2Publication Date: 2019-03-05
- Inventor: Alfred Feitisch , Gabi Neubauer , Mathias Schrempel
- Applicant: SpectraSensors, Inc.
- Applicant Address: US CA Rancho Cucamonga
- Assignee: SpectraSensors, Inc.
- Current Assignee: SpectraSensors, Inc.
- Current Assignee Address: US CA Rancho Cucamonga
- Agency: Mintz Levin
- Main IPC: H01S3/04
- IPC: H01S3/04 ; H01S5/022 ; H01L23/00 ; H01S5/042

Abstract:
A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
Public/Granted literature
- US20170317468A1 SEMICONDUCTOR LASER MOUNTING WITH INTACT DIFFUSION BARRIER LAYER Public/Granted day:2017-11-02
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