Invention Grant
- Patent Title: Power amplification circuit
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Application No.: US15683859Application Date: 2017-08-23
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Publication No.: US10224880B2Publication Date: 2019-03-05
- Inventor: Yuri Honda
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JP2015-215771 20151102
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/32 ; H03F3/19 ; H03F3/21

Abstract:
A power amplification circuit includes: a first output transistor that has a power supply voltage supplied to its collector or drain, has a common emitter or source, amplifies an input signal supplied to its base or gate and outputs a first amplified signal from its collector or drain; a first transistor that has the power supply voltage supplied to its collector or drain, has a first current supplied to its base or gate and supplies a first bias current to the base or gate of the first output transistor from its emitter or source; and a second transistor that has its collector or drain connected to the base or gate of the first transistor, has a second current supplied to its base or gate and supplies a second bias current to the base or gate of the first output transistor from its emitter or source.
Public/Granted literature
- US20170353162A1 POWER AMPLIFICATION CIRCUIT Public/Granted day:2017-12-07
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