Invention Grant
- Patent Title: Active gate bias driver
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Application No.: US15372219Application Date: 2016-12-07
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Publication No.: US10224918B2Publication Date: 2019-03-05
- Inventor: Rajeev-Krishna Vytla , Danish Khatri , Min Fang
- Applicant: Infineon Technologies Americas Corp.
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: H03K17/18
- IPC: H03K17/18 ; H03K17/16 ; H03K17/06

Abstract:
A device is described that includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch and an active gate bias driver configured to actively drive a voltage at the gate of the switch to a bias voltage in response to receiving an indication to deactivate the switch. The bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than a ground voltage of the gate driver.
Public/Granted literature
- US20180159520A1 ACTIVE GATE BIAS DRIVER Public/Granted day:2018-06-07
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