Invention Grant
- Patent Title: Method and apparatus for driving a power transistor gate
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Application No.: US14436740Application Date: 2012-10-31
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Publication No.: US10224923B2Publication Date: 2019-03-05
- Inventor: Thierry Sicard , Philippe Perruchoud
- Applicant: Thierry Sicard , Philippe Perruchoud
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- International Application: PCT/IB2012/002653 WO 20121031
- International Announcement: WO2014/068352 WO 20140508
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K17/14 ; H03K17/567 ; H03K17/0412

Abstract:
A gate drive circuit includes a first switch electrically coupled to a single-supply input voltage node, the first switch electrically coupling the voltage node with a first capacitor if switched on; a second switch electrically coupled to a ground node, the second switch electrically coupling the first capacitor with the ground node if switched on; and the first capacitor. A first capacitor lead of the first capacitor is electrically coupled to the first and second switches and a second capacitor lead of the first capacitor is arranged to connect with a power transistor gate.
Public/Granted literature
- US20150288356A1 METHOD AND APPARATUS FOR DRIVING A POWER TRANSISTOR GATE Public/Granted day:2015-10-08
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