Invention Grant
- Patent Title: Radio frequency coupling and transition structure
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Application No.: US15334922Application Date: 2016-10-26
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Publication No.: US10225925B2Publication Date: 2019-03-05
- Inventor: Li Qiang , Ralf Reuter , Bernhard Grote , Ljubo Radic , Ziqiang Tong
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- Main IPC: G01S7/03
- IPC: G01S7/03 ; H01P3/12 ; H01P5/02 ; H01P5/08 ; H05K1/02 ; H05K1/09 ; H05K1/11 ; H05K1/14 ; H05K3/06 ; H05K3/42 ; G01S13/93 ; H01L23/66 ; H01P11/00

Abstract:
A radio frequency transmission structure couples a RF signal between a first and a second radiating elements arranged at a first and a second sides of a first dielectric substrate, respectively. The RF coupling structure comprises first and second coupling structures. Each coupling structure has a hole arranged through the first dielectric substrate, a first electrically conductive layer arranged on a first wall of the hole to electrically connect a first and a second signal terminals, a second electrically conductive layer arranged on a second wall of the hole opposite to the first wall to electrically connect a first and a second reference terminals. The first electrically conductive layer is separated from the second electrically conductive layer. The first and second coupling structures are symmetrically arranged with the first electrically conductive layers closer to each other than the second electrically conductive layers are to each other.
Public/Granted literature
- US20170048969A1 RADIO FREQUENCY COUPLING AND TRANSITION STRUCTURE Public/Granted day:2017-02-16
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