Invention Grant
- Patent Title: Data writing and reading methods for flash
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Application No.: US15107326Application Date: 2014-12-23
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Publication No.: US10228875B2Publication Date: 2019-03-12
- Inventor: Zhou Lu , Huazhang Yu
- Applicant: Feitian Technologies Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: FEITIAN TECHNOLOGIES CO., LTD.
- Current Assignee: FEITIAN TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Ohlandt, Greeley, Ruggiero & Perle, LLP
- Priority: CN201310718814 20131224; CN201310721756 20131224; CN201410024168 20140120
- International Application: PCT/CN2014/094668 WO 20141223
- International Announcement: WO2015/096698 WO 20150702
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/02

Abstract:
Data writing and reading methods for a flash. The data writing method comprises: when remaining spaces of a data area and of an index area of a physical page are sufficient, sequentially storing present-instance write data into the data area of the physical page, and generating an index journal and sequentially writing same into the index area of the physical page; otherwise, organizing actual data in the physical page, storing the actual data into a data area of an idle page, and generating, on the basis of the actual data, an index journal and writing same into an index area of the idle page. The data reading method comprises: acquiring the actual memory address of to-be-read data on the basis of the index journal in the index area of the physical page, and reading the data from the actual memory address.
Public/Granted literature
- US20170010833A1 DATA WRITING AND READING METHODS FOR FLASH Public/Granted day:2017-01-12
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