Invention Grant
- Patent Title: Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
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Application No.: US15859517Application Date: 2017-12-30
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Publication No.: US10229724B1Publication Date: 2019-03-12
- Inventor: Mourad El Baraji , Kadriye Deniz Bozdag , Marcin Jan Gajek , Michail Tzoufras
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L27/22 ; H01F10/32 ; H01L43/02
Abstract:
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a plurality of orthogonal spin transfer magnetic tunnel junction (OST-MTJ) stacks connected in series, with each OST-MTJ stack capable of selective activation by application of an external magnetic field, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.
Public/Granted literature
- US1327099A Method of welding Public/Granted day:1920-01-06
Information query
