A memory circuit has a ferroelectric memory cell having a word line and a bit line, an input transistor connected to the bit line, a gain element electrically connected the bit line, wherein the gain element includes a feedback capacitor, and an output terminal. A method of reading a memory cell includes applying a voltage to a word line of the memory cell, causing charge to transfer from the memory cell to a feedback capacitor, generating a voltage, amplifying the voltage by applying a gain having a magnitude of less than three, sensing an output voltage at an output node to determine a state of the memory cell, and storing the memory state in a latch.