Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15876132Application Date: 2018-01-20
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Publication No.: US10229732B2Publication Date: 2019-03-12
- Inventor: Masanao Yamaoka , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2001-324357 20011023
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C11/419 ; G11C5/14 ; G11C11/417 ; G11C11/412

Abstract:
A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
Public/Granted literature
- US20180144790A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-05-24
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