Invention Grant
- Patent Title: Memory interface latch with integrated write-through function
-
Application No.: US15823635Application Date: 2017-11-28
-
Publication No.: US10229748B1Publication Date: 2019-03-12
- Inventor: Elizabeth L. Gerhard , Todd A. Christensen , Chad A. Adams , Peter T. Freiburger
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Stosch Sabo
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C29/38 ; G11C29/12

Abstract:
A memory interface latch including a data NAND gate and a feedback gate can be created within an integrated circuit (IC). When a feedback node is driven low, the data NAND gate can drive an inverted value of a memory array bitline input to a data output of the memory interface latch within a time of one gate delay. A feedback gate can, in a functional mode, during one phase of a clock signal, drive the feedback node high and during the other phase of the clock signal, drive the feedback node to a complement the data output. The feedback gate can be also, in an LBIST write-through mode, drive the feedback node to the value of a WRITE_DATA input. The feedback gate can be also, in a fence mode, drive the feedback node to fixed logic value.
Information query