Invention Grant
- Patent Title: Plasma processing apparatus with lattice-like faraday shields
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Application No.: US14447608Application Date: 2014-07-30
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Publication No.: US10229813B2Publication Date: 2019-03-12
- Inventor: Tadayoshi Kawaguchi , Ryoji Nishio , Tsutomu Tetsuka
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2014-090828 20140425
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H05H1/46

Abstract:
In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power.
Public/Granted literature
- US20150311040A1 PLASMA PROCESSING APPARATUS Public/Granted day:2015-10-29
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