- Patent Title: Transition metal-bearing capping film for group III-nitride devices
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Application No.: US15582785Application Date: 2017-05-01
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Publication No.: US10229839B2Publication Date: 2019-03-12
- Inventor: Travis J. Anderson , Boris N. Feygelson , Andrew D. Koehler , Karl D. Hobart , Francis J. Kub , Jordan Greenlee
- Applicant: The United States of America, as Represented by the Secretary of the Navy
- Applicant Address: US DC Washington
- Assignee: The United States of America, as Represented by the Secretary of the Navy
- Current Assignee: The United States of America, as Represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joseph T. Grunkemeyer
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/20 ; H01L21/265 ; H01L21/324
Abstract:
An method of annealing by: providing a substrate having a III-nitride, sapphire, silicon, diamond, gallium arsenide, or silicon carbide surface; depositing a layer of a transition metal nitride directly on the surface; and annealing the substrate at at least 900° C. in an oxygen-free environment. An article having: a substrate having a III-nitride, sapphire, silicon, diamond, gallium arsenide, or silicon carbide surface; and a layer of a transition metal nitride directly on the surface.
Public/Granted literature
- US20170316952A1 TRANSITION METAL-BEARING CAPPING FILM FOR GROUP III-NITRIDE DEVICES Public/Granted day:2017-11-02
Information query
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