Invention Grant
- Patent Title: Power semiconductor device
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Application No.: US14221198Application Date: 2014-03-20
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Publication No.: US10229867B2Publication Date: 2019-03-12
- Inventor: Shinya Nakagawa , Tomofumi Tanaka
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-124353 20130613
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A power semiconductor device includes a plurality of power chips sealed in a package to control power and an IC sealed in the package to control each of the power chips. The IC is disposed at the center part of the package in the plan view. The plurality of power chips are disposed so as to surround the IC in the plan view.
Public/Granted literature
- US20140367846A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2014-12-18
Information query
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