Invention Grant
- Patent Title: Packaged semiconductor device with tensile stress and method of making a packaged semiconductor device with tensile stress
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Application No.: US13691587Application Date: 2012-11-30
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Publication No.: US10229870B2Publication Date: 2019-03-12
- Inventor: Ralf Otremba
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/50 ; H01L23/29 ; H01L23/00
Abstract:
An assembled semiconductor device and a method of making an assembled semiconductor device are disclosed. In one embodiment the assembled device includes a carrier having a first thickness, a connection layer disposed on the carrier and a chip disposed on the connection layer, the chip having a second thickness, wherein the second thickness is larger than the first thickness.
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